Infineon SPW24N60CFD 600V CoolMOS™ Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's SPW24N60CFD, a 600V CoolMOS™ CFD2 power transistor engineered to set new benchmarks in high-efficiency switching applications, from server and telecom SMPS to industrial motor drives and renewable energy systems.

This device leverages Infineon's proprietary CoolMOS™ CFD2 technology, which represents a significant leap over traditional superjunction (SJ) MOSFETs. The core of its innovation lies in the integrated fast body diode, a critical feature that eliminates the need for an external anti-parallel diode in many topologies. This diode is optimized for exceptionally low reverse recovery charge (Qrr) and soft recovery characteristics. This directly translates to drastically reduced switching losses, especially in hard-switching and inductive switching applications like power factor correction (PFC) circuits. Lower losses mean cooler operation, enhanced reliability, and the ability to push switching frequencies higher, which in turn allows for the design of smaller, lighter magnetic components and filters.

Beyond the diode, the SPW24N60CFD boasts an ultra-low effective output capacitance (Coss,eff). This parameter is crucial for achieving high efficiency in modern quasi-resonant and soft-switching topologies (e.g., LLC resonant converters), where losses are predominantly determined by capacitive switching. The reduced Coss,eff minimizes the energy dissipated during each switching cycle, further elevating overall system efficiency across a wide load range.

The transistor also features low gate charge (Qg) and excellent switching dynamics, ensuring straightforward drive requirements and minimizing drive losses. Combined with its low on-state resistance (RDS(on)), which minimizes conduction losses, the SPW24N60CFD offers a perfect balance between switching and conduction performance. This makes it an ideal component for designers aiming to meet stringent energy efficiency standards like 80 PLUS Titanium.

Housed in a TO-247 package, the device offers excellent thermal performance, facilitating effective heat dissipation in high-power scenarios. Its high ruggedness and avalanche energy capability ensure superior reliability and robustness against voltage spikes and unpredictable stress conditions commonly encountered in industrial environments.

ICGOOODFIND: The Infineon SPW24N60CFD is not merely a component but a comprehensive solution for next-generation power conversion. Its integration of a fast body diode, ultra-low Coss,eff, and low RDS(on) directly addresses the key challenges of switching and conduction losses. By enabling higher efficiency, higher power density, and enhanced reliability, this CoolMOS™ transistor is a pivotal enabler for advanced, sustainable, and compact power supply designs across a vast array of industries.

Keywords: CoolMOS™ CFD2, Fast Body Diode, Low Switching Losses, Ultra-low Output Capacitance, High-Efficiency Switching.