Infineon IPTG014N10NM5ATMA1 OptiMOS 5 Power MOSFET: Datasheet, Specifications, and Application Notes

The relentless pursuit of higher efficiency and power density in modern electronics has made the advancement of power semiconductor technology more critical than ever. Infineon Technologies, a leader in this field, addresses these demands with its OptiMOS™ 5 power MOSFET family. The IPTG014N10NM5ATMA1 stands as a prime example, offering a blend of ultra-low on-state resistance and exceptional switching performance that is engineered to minimize power losses in a wide array of applications.

This device is a N-channel power MOSFET built on Infineon’s advanced OptiMOS™ 5 technology platform. Housed in a superior PG-TDSON-8-31 (8x8mm) package, it is designed for high power density and efficient thermal management. The package offers a very low parasitic inductance and is compatible with automated assembly processes, making it suitable for modern, compact power designs.

Key Specifications and Characteristics

A thorough review of the datasheet reveals the specifications that make this component a high-performance choice:

Voltage Rating: 100 V drain-source voltage (V_DSS), making it ideal for applications like 48V input server and telecom power systems, industrial motor drives, and battery management systems.

Continuous Drain Current (I_D): 140 A at a case temperature (T_C) of 25°C. This high current capability is essential for handling significant power levels.

On-State Resistance (R_DS(on)): An exceptionally low 1.4 mΩ (max) at V_GS = 10 V. This is arguably the most critical figure of merit, as it directly governs conduction losses. A lower R_DS(on) means less energy is wasted as heat during the on-state.

Gate Charge (Q_G): A typical total gate charge of 116 nC. This low gate charge significantly reduces switching losses by enabling faster turn-on and turn-off transitions, which is crucial for high-frequency operation.

Figure of Merit (FOM): The product of R_DS(on) and Q_G is excellent, indicating an optimal balance between conduction and switching losses.

Application Notes and Circuit Design Considerations

Implementing the IPTG014N10NM5ATMA1 effectively requires attention to several key areas:

1. Gate Driving: To leverage the fast switching capability, a dedicated, low-impedance gate driver IC is mandatory. The driver must be capable of sourcing and sinking sufficient peak current to quickly charge and discharge the MOSFET’s input capacitance. Proper selection of the gate driver voltage (typically 10-12V) is vital to ensure the MOSFET is fully enhanced, achieving the advertised R_DS(on).

2. PCB Layout: The high-speed switching nature of this MOSFET makes PCB layout paramount. The goal is to minimize parasitic inductance, especially in the high-current loop and the gate drive circuit. This involves using a tight layout, wide and short traces, generous use of ground planes, and placing decoupling capacitors very close to the device. A poor layout can lead to severe voltage spikes, ringing, and electromagnetic interference (EMI).

3. Thermal Management: Despite its high efficiency, the MOSFET will still dissipate heat. The PG-TDSON-8 package features an exposed thermal pad that must be soldered to a copper pour on the PCB, which acts as the primary heat sink. Adequate cooling, through sufficient copper area and possibly forced airflow, is necessary to keep the junction temperature within safe limits and ensure long-term reliability.

4. Protection Circuits: Practical designs should include provisions for overcurrent protection (e.g., using shunt resistors or desaturation detection in the driver) and over-temperature sensing to safeguard the MOSFET under fault conditions.

Typical Applications

The combination of high current handling, low losses, and a 100V rating positions this MOSFET perfectly for:

Switch-Mode Power Supplies (SMPS): Particularly in synchronous rectification and primary-side switches for 48V input Intermediate Bus Converters (IBCs) and VRM (Voltage Regulator Modules).

Motor Control and Drives: In H-bridge and three-phase inverter configurations for industrial brushless DC (BLDC) motors.

Solar Inverters and Energy Storage Systems: For maximum power point tracking (MPPT) and DC-AC inversion stages.

Battery Protection and Management (BMS): As a main disconnect switch due to its low R_DS(on), which minimizes voltage drop and power loss.

ICGOODFIND

The Infineon IPTG014N10NM5ATMA1 exemplifies the cutting edge of power MOSFET technology. Its industry-leading low R_DS(on) and optimized switching characteristics make it a superior component for designers aiming to push the boundaries of efficiency and power density. Successful implementation hinges on a robust gate driving strategy and a meticulous, low-inductance PCB layout to fully harness its performance potential.

Keywords: OptiMOS 5, Low RDS(on), Power MOSFET, High Efficiency, Switching Performance