Infineon IPD70R360P7SAUMA1: A High-Performance 70 mΩ MOSFET for Advanced Power Management

Release date:2025-10-31 Number of clicks:92

Infineon IPD70R360P7SAUMA1: A High-Performance 70 mΩ MOSFET for Advanced Power Management

The relentless drive for higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this need, the Infineon IPD70R360P7SAUMA1 stands out as a benchmark 70 mΩ MOSFET engineered for superior performance in advanced power management applications. This device, built on Infineon’s proprietary OptiMOS™ technology, represents a significant leap forward in combining low conduction losses with exceptional switching characteristics.

A defining feature of this MOSFET is its extremely low on-state resistance (RDS(on)) of just 70 mΩ. This minimal resistance is crucial for minimizing conduction losses, which directly translates to higher system efficiency, reduced heat generation, and the potential for more compact thermal management solutions. Whether deployed in synchronous rectification stages of switch-mode power supplies (SMPS) or in motor control circuits, this low RDS(on) ensures that more power is delivered to the load and less is wasted as heat.

Beyond its static performance, the device excels in dynamic operation. It offers ultra-low gate charge (Qg) and outstanding figure-of-merit (FOM) characteristics. These traits are vital for achieving high-frequency switching, which allows designers to shrink the size of associated passive components like inductors and capacitors. This capability is indispensable for meeting the ever-increasing demand for smaller, lighter, and more power-dense designs in applications from server and telecom power systems to industrial automation and battery management.

The IPD70R360P7SAUMA1 is housed in a robust SuperSO8 package, which provides an excellent balance of compact footprint and superior thermal performance. This package’s low parasitic inductance also contributes to stable switching behavior and helps in mitigating voltage spikes, enhancing overall system reliability. Furthermore, its high maximum junction temperature rating ensures dependable operation even under strenuous conditions.

ICGOODFIND: The Infineon IPD70R360P7SAUMA1 is a top-tier power MOSFET that sets a high standard for efficiency and thermal performance. Its optimal blend of ultra-low RDS(on), minimal switching losses, and a robust package makes it an exceptional choice for engineers designing high-efficiency, high-power-density solutions across a wide range of industries.

Keywords: Power MOSFET, Low RDS(on), High-Efficiency, OptiMOS™, Thermal Performance.

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