Infineon IPD50N04S4-08: High-Performance N-Channel MOSFET for Power Management Applications

In the realm of modern power electronics, the efficiency and reliability of a design are paramount. The Infineon IPD50N04S4-08 stands out as a high-performance N-Channel power MOSFET engineered to meet the rigorous demands of today's power management applications. This device exemplifies Infineon's expertise in semiconductor technology, offering an exceptional blend of low losses, high switching performance, and robust operation.

A key strength of the IPD50N04S4-08 lies in its exceptionally low on-state resistance (RDS(on)) of just 3.8 mΩ (max. at VGS = 10 V). This ultra-low resistance is critical for minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. Designers can leverage this to create more compact solutions with less need for bulky heat sinks, or to push for higher power density in space-constrained applications such as DC-DC converters and motor control systems.

Furthermore, this MOSFET is built using Infineon's advanced OptiMOS™ power technology platform. This technology is renowned for its outstanding switching characteristics and high reliability. The device boasts a low gate charge (Qg) and figures of merit that ensure fast switching speeds. This is vital for high-frequency switching regulators, where reducing switching losses is essential for achieving peak efficiency. The combination of low RDS(on) and superior switching performance makes the IPD50N04S4-08 an ideal choice for demanding roles in server power supplies, automotive systems, and industrial motor drives.

The component is also designed for robustness. It features a high maximum drain current (ID) of 50 A and an avalanche ruggedness that ensures operational stability even under stressful conditions. Its industry-standard D2PAK (TO-263) package offers excellent power dissipation capabilities, contributing to its overall thermal performance and long-term reliability.

ICGOO

The Infineon IPD50N04S4-08 is a top-tier N-Channel MOSFET that delivers superior efficiency and reliability for power management. Its ultra-low RDS(on), fast switching speed courtesy of OptiMOS™ technology, and robust construction make it an outstanding component for optimizing performance in a wide array of high-power applications, from computing to automotive.

Keywords:

1. Power Management

2. Low RDS(on)

3. OptiMOS™ Technology

4. High Efficiency

5. Switching Performance